On Wednesday,RTX Corporation (NYSE:RTX) said Raytheon has secured a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors. These will be based on diamond and aluminum nitride technology, which revolutionizes semiconductor electronics by increasing power delivery and thermal management in sensors and other electronic applications. In phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and integrate them into electronic devices. Phase two will focus on optimizing and advancing…